A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology
| Autor: | Srdjan Glisic, Maruf Hossain, Chafik Meliani, O. Krueger, Wolfgang Heinrich, T. Kraemer, Ina Ostermay, Bernd Tillack, Mohamed Elkhouly, Viktor Krozer, B. Janke, J. Borngraeber, Y. Borokhovych, Thomas Jensen, Marco Lisker |
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| Rok vydání: | 2014 |
| Předmět: |
Engineering
business.industry Electrical engineering dBc BiCMOS Condensed Matter Physics Harmonic analysis chemistry.chemical_compound Voltage-controlled oscillator Electricity generation chemistry Phase noise Indium phosphide Electrical and Electronic Engineering business Monolithic microwave integrated circuit |
| Zdroj: | IEEE Microwave and Wireless Components Letters. 24:469-471 |
| ISSN: | 1558-1764 1531-1309 |
| DOI: | 10.1109/lmwc.2014.2316220 |
| Popis: | A 246 GHz source in InP-on-BiCMOS technology is presented. It consists of a voltage controlled oscillator (VCO) in BiCMOS technology and a frequency tripler in transferred-substrate InP-HBT technology, which is integrated on top of the BiCMOS MMIC in a wafer-level bonding process. The VCO operates at 82 GHz with 6 dBm output power and the combined circuit delivers $-10~{\rm dBm}$ at 246 GHz, with a phase noise of $-87~{\rm dBc}/{\rm Hz}$ at 2 MHz offset. To the knowledge of the authors, this is the first hetero-integrated signal source in this frequency range reported so far. The results illustrate the potential of the hetero integrated process for sub-mm-wave frequencies. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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