High d/gamma values in diode laser structures for very high power

Autor: Stewart D. McDougall, I. B. Petrescu-Prahova, T. Moritz, John H. Marsh, D. Bambrick, D. Silan, E. Goutain, P. Modak, Bocang Qiu, J. Riordan
Rok vydání: 2009
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.810041
Popis: Record values for the rollover power and rollover linear power densities of 9xx nm devices, obtained by simultaneous scaling of length and d/Γ, are reported. The values for d/Γ lay in the range 0.8 μm to 1.2 μm with corresponding cavity lengths from 3.5 mm to 5 mm. The transversal structures were asymmetric, with a higher refractive index on the n side. An optical trap was helpful in reducing the radiation extension on the p side and the overall thickness. The highest rollover linear power densities were 244 mW/μm for structures without an optical trap and 290 mW/μm for those that included an optical trap.
Databáze: OpenAIRE