Laser-Driven Semiconductor Switch as a Diagnostic Method in Terahertz Band
| Autor: | I. A. Litovsky, M. L. Kulygin |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Permittivity Materials science Condensed Matter::Other business.industry Terahertz radiation Frequency band Physics::Optics Laser 01 natural sciences Optical switch law.invention 010309 optics Condensed Matter::Materials Science Resonator Semiconductor law 0103 physical sciences Optoelectronics Dissipation factor business |
| Zdroj: | 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). |
| DOI: | 10.1109/irmmw-thz.2019.8873901 |
| Popis: | A conception of using a laser-driven resonator cavity switch as a diagnostic method for semiconductors in terahertz frequency band is presented. The resonant behavior allows one to achieve good accuracy in measuring the semiconductor’s permittivity and loss tangent. The method features extremely low amount of semiconductor needed for the analysis in comparison with known methods. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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