HgCdTe all‐epitaxial semiconductor/semimetal Schottky photodiode

Autor:	R. D. Feldman, J. L. Zyskind, J. W. Sulhoff, C. A. Burrus, R. F. Austin
Rok vydání:	1990
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Schottky diode Heterojunction Semimetal Photodiode law.invention Optics law Optoelectronics Quantum efficiency business Molecular beam epitaxy Diode Dark current
Zdroj:	Applied Physics Letters. 56:388-390
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.102794
Popis:	We propose and demonstrate an all‐epitaxial semiconductor/semimetal Schottky (S3) photodiode based on an n‐type Hg0.56Cd0.46 Te/HgTe isotype heterojunction. The structure, grown using molecular beam epitaxy, was fabricated into back‐illuminated mesa diodes. A 40‐μm‐diam photodiode shows room‐temperature rectification and high efficiency photoresponse, with a long‐wavelength cutoff of 2.43 μm and a peak quantum efficiency of 44% at 2.0 μm for 250 mV of reverse bias. The dark current at this bias is 100 μA.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::53136c1bbffa2dc89977e7ea2d34d7bf https://doi.org/10.1063/1.102794 Zobrazit plný text záznamu