Relationship between the optical properties and superconductivity of InN with high carrier concentration

Autor:	Takashi Inushima, T Sakon, M. Motokawa
Rok vydání:	2004
Předmět:	Photoluminescence Absorption spectroscopy Condensed matter physics Band gap Chemistry Doping Fano resonance Condensed Matter Physics Inorganic Chemistry symbols.namesake Electrical resistivity and conductivity Materials Chemistry symbols Raman spectroscopy Luminescence
Zdroj:	Journal of Crystal Growth. 269:173-180
ISSN:	0022-0248
Popis:	We present data on the carrier concentration dependence of the absorption, luminescence and Raman spectra for InN grown by MBE on (0001) sapphire in the carrier concentration region where superconductivity was observed. The carrier concentration was changed from 2x10 19 to 7x10 20 cm -3 by Mg and Dy doping. The band gap energy increased as the carrier concentration increased, but the luminescence peak remained at around 0.8 eV. We attempt to interpret the Raman spectra using a Fano resonance. There was an optimum carrier concentration region for which the InN superconductivity occurred.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::530c2e1da34b747b5111843629adea3a https://doi.org/10.1016/j.jcrysgro.2004.05.072 Zobrazit plný text záznamu Full Text from ScienceDirect