Modeling the temperature-dependent reverse breakdown behavior of GaAs PIN diodes
| Autor: | V. Dudek, Andre Lange, F. A. Velarde Gonzalez, P. Scharf, M. Dietrich |
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| Rok vydání: | 2021 |
| Předmět: |
Work (thermodynamics)
Materials science Field (physics) Condensed Matter::Other business.industry Semiconductor device modeling PIN diode Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Temperature measurement law.invention Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry law Power electronics Optoelectronics Electronics business |
| Zdroj: | 2021 International Semiconductor Conference (CAS). |
| DOI: | 10.1109/cas52836.2021.9604151 |
| Popis: | The demands on modern electronics are constantly increasing. In the field of power electronics, the semiconductor material gallium arsenide (GaAs) is gaining more and more popularity. In this work, a first GaAs PIN Diode for 900 V operation is under investigation. With the help of simulations and measurements, the temperature-dependent reverse breakdown behavior is investigated. An analytical model will be presented, which can reproduce this behavior. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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