A two-dimensional electron gas in donor–acceptor doped backward heterostructures
| Autor: | A. B. Pashkovskii, V. M. Lukashin, V. G. Lapin, S. I. Novikov |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Doping Linearity 020206 networking & telecommunications Heterojunction 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Molecular physics Condensed Matter::Materials Science Transverse plane Quantization (physics) 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Rectangular potential barrier Donor acceptor Hot electron |
| Zdroj: | Technical Physics Letters. 43:562-566 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785017060232 |
| Popis: | We propose a backward-diode heterostructure modified by a built-in acceptor-doped layer that forms an additional potential barrier decreasing the transverse transport of hot electrons to the substrate. According to calculations, this structure is characterized by (i) an energy difference between dimensional quantization levels that is several times the optical phonon energy in GaAs and (ii) increased linearity of transfer characteristics. |
| Databáze: | OpenAIRE |
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