Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications
| Autor: | V. Saminathan, N. Mohan Kumar, R. Saravana Kumar, Sundarababu Baskaran, R. Poornachandran, V. Janakiraman |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Transistor Low leakage Heterojunction Hardware_PERFORMANCEANDRELIABILITY High-electron-mobility transistor Computer Science Applications Theoretical Computer Science law.invention Oxide semiconductor law Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering business AND gate Quantum well Hardware_LOGICDESIGN High-κ dielectric |
| Zdroj: | IETE Journal of Research. 69:1222-1232 |
| ISSN: | 0974-780X 0377-2063 |
| DOI: | 10.1080/03772063.2021.1929517 |
| Popis: | In this work, the impact of high-K and gate-to-drain spacing (Lgd) in InAs-based double-gate metal oxide semiconductor high-electron-mobility transistor (DG-MOS-HEMT) is analyzed for low-loss and h... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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