3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology
| Autor: | Jianjun Zhou, Yuechan Kong, Lishu Wu, Cen Kong, Tangsheng Chen, Ting-Ting Liu, Guo Huaixin |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor Electrical engineering Diamond 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor Substrate (electronics) Dissipation engineering.material 01 natural sciences Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering engineering Optoelectronics Electrical and Electronic Engineering business Fermi gas Current density Power density |
| Zdroj: | IEEE Electron Device Letters. 38:1417-1420 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | Based on a device-first transfer process, a 3-inch polycrystalline diamond substrate is bonded within $1.5~\mu \text{m}$ of the junction in GaN high electron mobility transistors (HEMTs) to enhance heat removal of the high-power RF devices. Highly preserved electrical performance is demonstrated by comparison exactly on the same HEMT device prior and after substrate transfer. The residual compressive strain relaxation of the whole GaN epilayer does not reduce the 2-D electron gas sheet density. The dc characteristics show weakened self-heating in the GaN-on-diamond HEMT with maximum current density increasing from 968 to 1005 mA/mm. The power density increases from 4.8 to 5.5 W/mm with the PAE slightly reducing from 50.9% to 50.5%. On-wafer infrared measurement is performed on a 1.25-mm GaN HEMT at power dissipation of 10 W/mm, and the peak juncture temperature of the device decreases from 241 °C to 191 °C after transferring to the diamond substrate. |
| Databáze: | OpenAIRE |
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