Dopant-Type and Concentration Dependence of Total-Ionizing-Dose Response in Piezoresistive Micromachined Cantilevers
Autor: | Ronald D. Schrimpf, Pranoy Deb Shuvra, Charles N. Arutt, Michael L. Alles, Ji-Tzuoh Lin, Daniel M. Fleetwood, Jimmy L. Davidson, Shamus McNamara, Kevin M. Walsh, Bruce W. Alphenaar |
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Rok vydání: | 2019 |
Předmět: |
Nuclear and High Energy Physics
Materials science Hydrogen Dopant Scattering Annealing (metallurgy) Doping chemistry.chemical_element Piezoresistive effect Nuclear Energy and Engineering chemistry Electrical resistivity and conductivity Absorbed dose Electrical and Electronic Engineering Composite material |
Zdroj: | IEEE Transactions on Nuclear Science. 66:397-404 |
ISSN: | 1558-1578 0018-9499 |
Popis: | Lighter doping, pretreatment (exposure to hydrogen in a steam bath), and lower dose rate are each found to exacerbate 10-keV X-ray-induced negative frequency shifts and increase in resistivity measured in T-shaped, asymmetric, piezoresistive, micromachined, and resonating cantilevers. All devices recover to levels close to preirradiation after several hours of postirradiation annealing. The effects are attributed to dose-rate-dependent efficiencies of the depassivation of dopants by hydrogen and surface charging effects, which alter the effective Young’s modulus and shear elastic constants. Increases in resistivity are attributed to increases in scattering causing decreases in mobility. Results indicate the need to consider dopant type and concentration when choosing microelectromechanical systems for use in radiation environments in addition to accounting for low-dose-rate effects. |
Databáze: | OpenAIRE |
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