Characterization of RF Sputter-Deposited Ultra Thin PZT Films and Its Interface With Substrate
| Autor: | Ankita Bose, A. K. M. Maidul Islam, Suchitra Sen, A.K. Balamurugan, Manabendra Mukherjee, Sandip Bysakh |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Analytical chemistry Substrate (electronics) Sputter deposition Condensed Matter Physics Lead zirconate titanate Ferroelectricity Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Control and Systems Engineering Sputtering Materials Chemistry Ceramics and Composites Electrical and Electronic Engineering Thin film Composite material Perovskite (structure) |
| Zdroj: | Integrated Ferroelectrics. 120:37-48 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584587.2010.491726 |
| Popis: | Lead Zirconate Titanate [Pb(Zr,Ti)O3, PZT] thin films have been extensively studied due to their possible applications in ferroelectric and piezoelectric devices. This work deals with the synthesis and characterization of ultra thin PZT films of thickness ∼100 nm deposited on Si/SiO2/TiO2/Pt(111) by RF Magnetron Sputtering under optimized deposition and post-annealing conditions. Various techniques like XRD, XPS, SIMS, SEM and TEM, have been employed to characterize the film nanostructure and the interface quality in the post-annealed films. Though the XRD results showed the formation of ∼87 vol% perovskite phase with 111 orientation, the films failed to show good electrical and ferroelectric properties. In XPS study of annealed PZT films, Pb was found to exist in both oxidised and metallic states. Both SIMS depth profiling and STEM-EDX line profile results showed that there is an enrichment of Pb along the PZT/Pt interface. This suggests interdiffusion of the elements in the film during post-annealing. I... |
| Databáze: | OpenAIRE |
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