Effects of a high humidity environment and air anneal treatments on the electrical resistivity of transparent conducting ZnO‐based thin films

Autor:	Aslan Abduev, Abdulla Abdullaev, Abil Asvarov, A. K. Akhmedov
Rok vydání:	2010
Předmět:	Materials science genetic structures Annealing (metallurgy) Doping Nanotechnology Sputter deposition Condensed Matter Physics eye diseases Sputtering Electrical resistivity and conductivity Charge carrier Thermal stability sense organs Thin film Composite material
Zdroj:	physica status solidi c. 7:1553-1555
ISSN:	1610-1642 1862-6351
Popis:	Transparent conducting Al-doped and Ga-doped ZnO thin films (so-called AZO and GZO, respectively) have been grown on glass substrates by dc magnetron sputtering under identical growth conditions. The thermal stability and the damp heat stability of AZO and GZO thin films deposited at room temperature (RT) as well as 250 °C were investigated for hi-tech applications in thin-film solar cells and displays. AZO and GZO thin films grown at 250 °C have showed much greater stability to air and damp heat treatments than thin films deposited at RT. At growth temperature of 250 °C, however, it was shown that GZO thin films resistivity to various treatments was significantly more stable than one for AZO thin films. The mechanism of the charge carrier transport in doped ZnO conducting thin films has been proposed. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::52b1ce5a154cb20741f6e9db6ed5e36a https://doi.org/10.1002/pssc.200983158 Zobrazit plný text záznamu Plný text