Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz
| Autor: | Samuel Kim, David F. Brown, Andrea Corrion, Miroslav Micovic, Joel Wong, Adele E. Schmitz, Helen Fung, Keisuke Shinohara, D. Regan, Yan Tang |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Wide-bandgap semiconductor Heterojunction Gallium nitride High-electron-mobility transistor Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Optoelectronics Figure of merit Breakdown voltage Electrical and Electronic Engineering business Ohmic contact Molecular beam epitaxy |
| Zdroj: | IEEE Electron Device Letters. 36:549-551 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | This letter reports record RF performance of deeply scaled depletion-mode GaN-high-electron-mobility transistors (GaN-HEMTs). Based on double heterojunction AlN/GaN/AlGaN epitaxial structure, fully passivated devices were fabricated by self-aligned-gate technology featuring recessed $n^{+}$ -GaN ohmic contact regrown by molecular beam epitaxy. Record-high $f_{T}$ of 454 GHz and simultaneous $f_{{\rm {max}}}$ of 444 GHz were achieved on a 20-nm gate HEMT with 50-nm-wide gate-source and gate-drain separation. With an OFF-state breakdown voltage of 10 V, the Johnson figure of merit of this device reaches 4.5 THz-V, representing the state-of-the-art performance of GaN transistor technology to-date. Compared with previous E-mode GaN-HEMTs of similar device structure, significantly reduced extrinsic gate capacitance and enhanced average electron velocity are the key reasons for improved frequency characteristic. |
| Databáze: | OpenAIRE |
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