Adhesion properties of nitrogen ion implanted ultra-nanocrystalline diamond films on silicon substrate
| Autor: | Wei-Chuan Fang, Huan Niu, H.Y. Huang, N.H. Tai, Umesh Palnitkar, I-Nan Lin, P.T. Joseph, Hsiu Fung Cheng |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Synthetic diamond Mechanical Engineering Analytical chemistry Diamond General Chemistry Chemical vapor deposition engineering.material Ion source Electronic Optical and Magnetic Materials law.invention Secondary ion mass spectrometry Ion implantation Chemical engineering law Plasma-enhanced chemical vapor deposition Materials Chemistry engineering Electrical and Electronic Engineering Thin film |
| Zdroj: | Diamond and Related Materials. 17:864-867 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2007.11.008 |
| Popis: | Ultra-nanocrystalline diamond (UNCD) films prepared by microwave plasma enhanced chemical vapor deposition were implanted using 0.3 MeV nitrogen ions under a dose of 10 13 , 10 14 , and 10 15 ions cm − 2 . While the surface morphology of the UNCD films was not pronounced modified, the crystallinity of the films was changed appreciably due to ion implantation. The scratch test has been used to study the adhesion of the film to the substrate, which illustrated that the critical load, used as a measure of the adhesive strength, is found to increase with ion dose. Secondary ion mass spectroscopy (SIMS) analyses on the interfacial morphology indicated that the main factor in improving the adhesive strength is the modification on interfacial structure through inter-diffusion between film and substrate. |
| Databáze: | OpenAIRE |
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