Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors
| Autor: | A. V. Korotkov, T. A. Shobolova, S. V. Obolensky, A. S. Puzanov, E. V. Petryakova, Vladimir Kozlov, A. V. Lipatnikov |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor 02 engineering and technology Integrated circuit Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences Optoelectronics Diffusion (business) 0210 nano-technology business Radiation resistance |
| Zdroj: | Semiconductors. 53:1353-1356 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | Approaches to solving the problem of the development of efficient bipolar and heterobipolar transistors operating at radio- and ultrahigh frequencies (0.1–10 GHz), which could be used as active elements of modern Si-based and GaAs-based radiation-resistant analog-digital integrated circuits, are discussed. Comparison of the radiation resistance of prospective “lateral” Si-based bipolar and “vertical” AlGaAs/GaAs heterobipolar transistors with a characteristic base thickness of 70–350 nm is performed. The features of the electron transport in active transistor regions are analyzed in detail and the influence of a surge in the velocity and the diffusion of quasi-ballistic electrons on an increase in the radiation resistance of transistors is evaluated. |
| Databáze: | OpenAIRE |
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