Custom profiles by automated multi-step implantation

Autor:	J.Philip Crook, L.A. Larson, Babak Adibi, Michael I. Current, S. Leung
Rok vydání:	1991
Předmět:	Nuclear and High Energy Physics Materials science business.industry Optoelectronics Implant Static random-access memory business Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:593-597
ISSN:	0168-583X
DOI:	10.1016/0168-583x(91)96238-g
Popis:	Multi-step implants using F as a preamorptuzing species for the formation of shallow p + source/drain junctions are investigated. SIMS, RBS and SRP data are combined to optimize process equivalents to 50 and 25 keV BF 2 implants. Incorporation of a dual implant sequence into a single, chained recipe and device results for a 1 Mbit SRAM are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5275189ff700594e134dfc5d8dea073d https://doi.org/10.1016/0168-583x(91)96238-g Zobrazit plný text záznamu