Effects of different partition depths on heat and oxygen transport during continuous Czochralski (CCz) silicon crystal growth

Autor:	Thi-Hoai-Thu Nguyen, Jyh-Chen Chen, Shih-Chi Lo
Rok vydání:	2022
Předmět:	Inorganic Chemistry Materials Chemistry Condensed Matter Physics
Zdroj:	Journal of Crystal Growth. 583:126546
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2022.126546
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5264d1869895635efe8fa2fd160ea7de https://doi.org/10.1016/j.jcrysgro.2022.126546 Zobrazit plný text záznamu Full Text from ScienceDirect