The Influence of Strains on the Ferromagnetic Resonance Spectrum of Submicron Yttrium Iron Garnet Films Obtained by Ion Beam Sputtering
| Autor: | Yu. A. Filimonov, A. I. Stognii, N. N. Novitskii, V. K. Sakharov, S. A. Nikitov, Yu. V. Khivintsev, A. V. Kozhevnikov, S. L. Vysotskii |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Radiation Ion beam sputtering Materials science Condensed matter physics Silicon Yttrium iron garnet Frequency shift chemistry.chemical_element 020206 networking & telecommunications 02 engineering and technology Condensed Matter Physics 01 natural sciences Ferromagnetic resonance Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Absorption (electromagnetic radiation) Spin (physics) Magnetoelastic coupling |
| Zdroj: | Journal of Communications Technology and Electronics. 64:1398-1406 |
| ISSN: | 1555-6557 1064-2269 |
| Popis: | The influence of strains on the ferromagnetic resonance (FMR) spectrum of submicron yttrium iron garnet (YIG) films produced by the ion beam sputtering on gadolinium-gallium garnet (GGG) and silicon (Si) substrates is explored. It is shown that the strain influence is displayed as a frequency shift of the absorption maximum in the FMR spectrum. The results indicate that the studied YIG/GGG and YIG/Si films have an efficient magnetoelastic coupling of the spin and elastic subsystems, which suggests that ion beam sputtering of YIG films on GGG and Si substructures can be a promising technique for production of straintronic devices. |
| Databáze: | OpenAIRE |
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