High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition
| Autor: | M. L. Zanaveskin, I. A. Chernykh, M. Ya. Chernykh, I. N. Trunkin, I. S. Ezubchenko, I. O. Mayboroda |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Nucleation General Chemistry Chemical vapor deposition 010403 inorganic & nuclear chemistry Condensed Matter Physics 01 natural sciences Rocking curve 0104 chemical sciences Full width at half maximum Quality (physics) Reflection (mathematics) 0103 physical sciences Optoelectronics General Materials Science business Bar (unit) |
| Zdroj: | Crystallography Reports. 65:122-125 |
| ISSN: | 1562-689X 1063-7745 |
| DOI: | 10.1134/s1063774520010071 |
| Popis: | The effect of trimethylaluminum preflow time on the crystalline quality of AlN films grown by metalorganic chemical vapor deposition on Si(111) substrates has been investigated. It is found that semipolar (10$$\bar {1}$$1) layers are formed in the AlN film with long preflow times. It is shown that the AlN nucleation can be controlled by choosing an optimal preflow time, which provides a desired film quality. At the optimum preflow time, the FWHM of the rocking curve for the 0002 reflection amounts to 0.59°. |
| Databáze: | OpenAIRE |
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