The schottky-barrier of GaAs(110)-Sb studied by UV photoemission

Autor:	H. Lüth, M. Mattern-Klosson
Rok vydání:	1985
Předmět:	chemistry.chemical_classification Photoemission spectroscopy Chemistry Schottky barrier Analytical chemistry General Chemistry Condensed Matter Physics Band bending Depletion region Monolayer Materials Chemistry Work function Electronic band structure Inorganic compound
Zdroj:	Solid State Communications. 56:1001-1004
ISSN:	0038-1098
DOI:	10.1016/s0038-1098(85)80044-2
Popis:	The band bending changes due to deposition of Sb on cleaved GaAs(110) surfaces are studied by UV photoemission spectroscopy (UPS). The band bending vs coverage curves are evaluated from measurements of the work function change Δ and a determination of the surface dipole contribution within Δ. For both n - and p -type material depletion layers are formed with saturation band bendings of 650 meV and −500 meV, respectively. These values are essentially reached for Sb coverages around 0.1 monolayer. The results fit well to predictions of the defect model for the explanation of Schottky-barriers on III–V compound semiconductor surfaces.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::525dd39712a2c01df4a654b8182a4fba https://doi.org/10.1016/s0038-1098(85)80044-2 Zobrazit plný text záznamu