Demonstration of Mos2 Memtransistor with Poly-Si Source/Drain Featuring Tunable Conductance States and Boosted ION

Autor:	K. S. Li, M. K. Huang, Y. H. Wang, Y. C. Tseng, C. J. Su
Rok vydání:	2023
Zdroj:	2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::52545bef96ee2b12858585bcd6252543 https://doi.org/10.1109/edtm55494.2023.10103051 Zobrazit plný text záznamu