Photoluminescence Characterization of Interface Quality of Bonded Silicon Wafers

Autor: Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo
Rok vydání: 2015
Předmět:
Zdroj: ECS Journal of Solid State Science and Technology. 5:P3064-P3068
ISSN: 2162-8777
2162-8769
Popis: Wafer-to-wafer bonding is implemented in fabrication of backside illuminated (BSI) complimentary metal-oxide-semiconductor image sensor (CIS) devices in volume manufacturing. A wafer with illuminated imager and a wafer with readout and image processing electronics are fabricated separately and assembled using wafer-to-wafer bonding. Since the illuminated imager and a wafer with readout and image processing electronics are facing each other at the bonded interface, the quality of wafer-to-wafer bonding interface can affect the performance of finished devices. Room temperature photoluminescence (RTPL) technique was studied as a non-contact, in-line characterization technique for assessing bonding interface quality. Ordinary and bonded, 200 mm Si wafers, with different surface finishing conditions, were characterized by RTPL under two different excitation wavelengths (650 nm and 827 nm) to investigate the effects of surface finishing conditions. Significant variations in RTPL spectra and intensity, suggesting potential electrical property variations, were observed from bonded wafers. RTPL characterization results on ordinary and bonded wafers are introduced as a potential technique for in-line bonding interface quality monitoring. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0111604jss] All rights reserved.
Databáze: OpenAIRE