Features of the Electron Mobility in the n-InSe Layered Semiconductor
| Autor: | A. Sh. Abdinov, R. F. Babayeva |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Condensed matter physics business.industry Bridgman method Doping 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Free carrier Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Semiconductor Electrical resistivity and conductivity Condensed Matter::Superconductivity Electric field 0103 physical sciences 0210 nano-technology business |
| Zdroj: | Semiconductors. 52:1662-1668 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s106378261813002x |
| Popis: | The dependences of the Hall electron mobility of n-InSe single crystals grown by the Bridgman method on a sample’s technological history, temperature, electric field, doping, and illumination are experimentally investigated. It is established that at temperatures below room temperature, the dependences of the electron mobility on external factors, initial resistivity, and doping are anomalous, i.e., do not obey the theory of free carrier mobility in quasi-ordered crystalline semiconductors. The observed anomalies are attributed to partial disordering and fluctuation of the potential of free energy bands of the n-InSe single crystals and can be controlled by temperature, electric field, doping, and illumination. |
| Databáze: | OpenAIRE |
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