Pion and proton induced radiation damage to silicon detectors
| Autor: | Valery Pugatch, K. T. Knöpfle, K. Riechmann |
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| Rok vydání: | 1996 |
| Předmět: |
Physics
Nuclear and High Energy Physics Silicon Proton Physics::Instrumentation and Detectors Annealing (metallurgy) Nuclear Theory Detector chemistry.chemical_element Nuclear physics Pion chemistry Radiation damage High Energy Physics::Experiment Nuclear Experiment Instrumentation Diode Leakage (electronics) |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 377:276-283 |
| ISSN: | 0168-9002 |
| Popis: | We report on the radiation damage to silicon detectors at 25°C and 10°C induced by 190 MeV positively charged pions and 21 MeV protons. The deduced damage parameters and annealing time constants characterize the change of the diode leakage currents and full depletion voltages as a function of temperature and fluences. The results are relevant for the optimisation of the operating parameters of the HERA-B silicon vertex detector system. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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