| Autor: |
N. Wichmann, S. Ammi, A. Aissat, S. Bollaert |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
Lecture Notes in Electrical Engineering ISBN: 9789811314049 |
| Popis: |
Our work is used to investigate the electrical proprieties of III-V MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from an InP/InAs/InGaAs structure. This simulation is done using Silvaco TCAD tools. We solve the coupled Poisson-Schrodinger equation that gives the carriers concentration and their eigen state energies at each level. The fundamental equations are based on the conventional drift-diffusion model of charge transport with Fermi-Dirac statistics and electric field-dependent mobility model. We present the charge control in channel and the complete I-V characteristics of InP/InAs/InGaAs MOSFET. The results obtained show the output Id-\( \text{V}_{{\rm{ds}}} \) and the transfer Id-\( \text{V}_{{\rm{gs}}} \) characteristic with Lg = 50 nm and To x = 4 nm. Ion of 330 mA/mm and maximum transconductance Gm of 405 mS/mm were calculated at Vd = 0.05 V. The transfer and Gm characteristics of this structure are shown with \( \text{L}_{\rm{g}} \) of 150 nm and 100 nm respectively. Ion and \( {\text{G}}_{{\rm{m,}\hbox{max} }} \) reach to (270–280) mA/mm and (328–346) mS/mm respectively. It is found that the threshold voltage decreases as the channel length is reduced. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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