Enhancement of photoluminescence of structures with nanocrystalline silicon stimulated by low-dose irradiation with γ-ray photons
| Autor: | I. Z. Indutniĭ, P. E. Shepelyavyĭ, M. V. Muravskaya, V. V. Voitovich, I. Lisovskyy, E. G. Gule |
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| Rok vydání: | 2008 |
| Předmět: |
Photoluminescence
Materials science Silicon business.industry Infrared Analytical chemistry Nanocrystalline silicon Infrared spectroscopy chemistry.chemical_element Radiation Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ionizing radiation chemistry Optoelectronics Irradiation business |
| Zdroj: | Semiconductors. 42:576-579 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The spectra of infrared transmittance and photoluminescence of thin-film nc-Si/SiO2 structures containing nanocrystalline silicon (nc-Si) and subjected to ionizing radiation (60Co) in the dose range D= 104−107 rad are studied. It is shown for the first time that low radiation doses (5 × 103 rad < D < 105 rad) lead to significant (as large as 40%) increases in the intensity of the photoluminescence band at 1.33 eV. The infrared spectra indicate that there is no variation in the composition and structure of the nanocomposite. The observed effect is accounted for by structural ordering of the nanocrystal-matrix interface; this ordering is stimulated by low-dose irradiation, i.e., removal of defects (recombination centers) at the nc-Si/SiO2 interfaces and resulting enhancement of the radiative-recombination channel. |
| Databáze: | OpenAIRE |
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