Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low- Noise Amplifiers Operation
| Autor: | Mattias Thorsell, Niklas Rorsman, Olle Axelsson, Johan Bergsten, Tongde Huang |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Amplifier Transistor Wide-bandgap semiconductor 020206 networking & telecommunications 02 engineering and technology 01 natural sciences Low-noise amplifier Electronic Optical and Magnetic Materials law.invention Low noise Stress (mechanics) law Logic gate 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Degradation (geology) Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 38:926-928 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2017.2709751 |
| Popis: | Three transistors with different AlGaN/GaN interface designs (sharp interface, standard interface, and an extra AlN interlayer) were studied in-depth under conditions mimicking low-noise amplifiers (LNAs) operation. A new measurement setup, analog to LNAs operation condition, is established to measure recovery time on device level. For the first time, a direct relationship between the recovery time and the design of AlGaN/GaN interface is revealed in devices with Carbon doping buffer in this letter. An extremely low-recovery time is demonstrated in the transistor with an AlN interlayer. Both transistors without an AlN interlayer exhibit severe gain and drain current degradation after pulsed input stress. The transistor with a sharp interface shows a recovery time around 10 ms, whereas the transistorwith a standard interface shows even much longer recovery time. These results imply that AlN interlayer, which can effectively block the injection of hot electrons to AlGaN bulk or surface traps, is highly preferred in systems where LNAs need to function promptly after an input overdrive. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|