Influence of capping conditions on structural properties of CdSe/ZnSe quantum dot structures
| Autor: | K. Leonardi, Jens Falta, H. Selke, H. Heinke, Th. Schmidt, A Stockmann, Detlef Hommel, T. Passow |
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| Rok vydání: | 2002 |
| Předmět: |
Diffraction
Materials science business.industry Analytical chemistry Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Flux ratio Electronic Optical and Magnetic Materials Optics Quantum dot Transmission electron microscopy business Layer (electronics) Molecular beam epitaxy Stacking fault |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 13:1208-1211 |
| ISSN: | 1386-9477 |
| Popis: | The intermixing and stacking fault formation for CdSe/ZnSe quantum dot structures grown on GaAs(0 0 1) by molecular beam epitaxy (MBE) were systematically investigated by high-resolution X-ray diffraction, grazing incidence X-ray diffraction and high-resolution transmission electron microscopy. The observed intermixing is caused by Cd surface segregation. Up to half of the initial Cd deposit redesorbs depending on the growth conditions during overgrowth of CdSe by ZnSe. The Cd redesorption increases with increasing II/VI flux ratio or temperature and is maximum using migration enhanced epitaxy instead of conventional MBE. This can be explained by a partial redesorption of segregating Cd atoms. The critical amount of CdSe for stacking fault formation decreases with increasing temperature during cap layer growth. |
| Databáze: | OpenAIRE |
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