Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization
| Autor: | Yu-Shu Lin, Hsin-Chih Lin, Po-Hsien Cheng, K.T. Huang, Miin-Jang Chen |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Transistor Nucleation General Physics and Astronomy 02 engineering and technology Surfaces and Interfaces General Chemistry Conductive atomic force microscopy Dielectric 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films law.invention Atomic layer deposition law Optoelectronics Deposition (phase transition) 0210 nano-technology business Layer (electronics) High-κ dielectric |
| Zdroj: | Applied Surface Science. 443:421-428 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2018.02.225 |
| Popis: | Sub-10 nm high-K gate dielectrics are of critical importance in two-dimensional transition metal dichalcogenides (TMDs) transistors. However, the chemical inertness of TMDs gives rise to a lot of pinholes in gate dielectrics, resulting in large gate leakage current. In this study, sub-10 nm, uniform and pinhole-free Al2O3 high-K gate dielectrics on MoS2 were achieved by atomic layer deposition without surface functionalization, in which an ultrathin Al2O3 layer prepared with a short purge time at a low temperature of 80 °C offers the nucleation cites for the deposition of the overlaying oxide at a higher temperature. Conductive atomic force microscopy reveals the significant suppression of gate leakage current in the sub-10 nm Al2O3 gate dielectrics with the low-temperature nucleation layer. Raman and X-ray photoelectron spectroscopies indicate that no oxidation occurred during the deposition of the low-temperature Al2O3 nucleation layer on MoS2. With the high-quality sub-10 nm Al2O3 high-K gate dielectrics, low hysteresis and subthreshold swing were demonstrated on the normally-off top-gated MoS2 transistors. |
| Databáze: | OpenAIRE |
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