Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs
Autor: | Sungjae Chang, Dong-Seok Kim, Kyu Jun Cho, Young-Ho Bae, Hokyun Ahn, Hyung Sup Yoon, Yoo-Jin Jang, Sung-Bum Bae, Byoung-Gue Min, Jong-Won Lim, Hyun-Wook Jung, Dong Min Kang, Jeong Jin Kim, Haecheon Kim |
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Rok vydání: | 2019 |
Předmět: | |
Zdroj: | ECS Journal of Solid State Science and Technology. 8:Q245-Q248 |
ISSN: | 2162-8777 2162-8769 |
Databáze: | OpenAIRE |
Externí odkaz: |