| Autor: |
M.R. Yahya, Amiza Rasmi, A. I. A. Rahim, M. H. Siti Maisurah, S. Rasidah |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 IEEE Regional Symposium on Micro and Nano Electronics. |
| DOI: |
10.1109/rsm.2011.6088303 |
| Popis: |
This paper present the design of 2-stage 15 GHz power amplifier (PA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply of 4.5 V and DC bias of −0.2 V. The PA delivers maximum linear output power of 22.21 dBm while achieving maximum power-added-efficiency (PAE) of 37.02 %. The PA has an input and output return loss at 20.76 dB and 25.19 dB respectively. Having a current consumption of 132 mA, this PA achieves a small signal gain of 22.34 dB. The proposed PA is designed within a die size of about 2.08 × 1.03 mm2 on GaAs substrate. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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