Process effect analysis on nitride trap distribution in silicon-oxide-nitride-oxide-silicon flash memory based on charge retention model

Autor:	Seung-Dong Yang, Yun-mi Kang, Yu-min Song, Ga-Won Lee, Deok-Min Park, Jun-Kyo Jeong
Rok vydání:	2021
Předmět:	Materials science Silicon business.industry Process (computing) Oxide chemistry.chemical_element Nitride Flash memory Trap (computing) chemistry.chemical_compound chemistry Optoelectronics General Materials Science business Silicon oxide Charge retention
Zdroj:	Materials Express. 11:1615-1618
ISSN:	2158-5849
Popis:	This paper analyzes data retention characteristics to determine process effects on the trap energy distribution of silicon nitride in silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. Nitride films were prepared by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD). PEVCD films embedded with silicon nanocrystals (Si-NCs) were also compared. The flat band voltage shift in the programmed device was measured at high temperatures to observe the thermal excitation of electrons from the nitride traps in retention mode. The trap energy distribution was extracted using the charge decay rates, and the experimental results showed that nitride fabricated by PECVD has a shallower trap than nitride fabricated by LPCVD. In nitride with Si-NCs, increased trap sites were observed in the range of 1.14 eV to 1.24 eV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::51d08607efacf8cc094b8de2755b99f2 https://doi.org/10.1166/mex.2021.2067 Zobrazit plný text záznamu