| Autor: |
M.J. Delaney, R. Rhodes, Lawrence E. Larson, L.D. Nguyen, M.A. Thompson, Mehran Matloubian, L.M. Jelloian, April S. Brown, J.E. Pence |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
1993 IEEE MTT-S International Microwave Symposium Digest. |
| Popis: |
The authors report on the state-of-the-art power performance of InP-based HEMTs (high electron mobility transistors) at 59 GHz. Using a 448- mu m-wide HEMT with a gate-length of 0.15 mu m, an output power of 155 mW with a 4.9-dB gain and a power-added efficiency of 30.1% were obtained. By power-combining two of these HEMTs, an output power of 288 mW with 3.6-dB gain and a power-added efficiency of 20.4% were achieved. This is the highest output power reported with such a high efficiency for InP-based HEMTs, and is comparable to the best results reported for AlGaAs/InGaAs on GaAs pseudomorphic HEMTs at this frequency. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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