Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS2 Transistors
| Autor: | Abdullah G. Alharbi, Davood Shahrjerdi, Takashi Taniguchi, Kenji Watanabe, Zhujun Huang |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Substrate coupling Materials science business.industry Annealing (metallurgy) Scattering Transistor 01 natural sciences Surface energy Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences Monolayer Optoelectronics Field-effect transistor Charged impurity Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 40:135-138 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2018.2883808 |
| Popis: | We study the effect of substrate coupling on the variability and the device characteristics of monolayer MoS2 field-effect transistors (FETs). Our electrical measurement results reveal significant improvements of key FET device metrics and marked reduction of device variability with reducing the interfacial energy. We attribute the observed improvements of the device characteristics to the reduction of the interface trap density and the suppression of the charged impurity scattering. This study establishes the critical role of substrate coupling on the performance and variability of monolayer MoS2 FETs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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