Vertical transport in a GaAs/(Ga,Al)As superlattice containing an enlarged quantum well studied by photoluminescence in high in-plane magnetic fields
| Autor: | M.B. Stanaway, Mohamed Henini, John Singleton, H A J M Reinen, J.M. Chamberlain, Pcm Christianen, G M H Knippels |
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| Rok vydání: | 1992 |
| Předmět: |
chemistry.chemical_classification
Yield (engineering) Photoluminescence Condensed matter physics Field (physics) Exciton Superlattice Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Magnetic field Condensed Matter::Materials Science chemistry Materials Chemistry Electrical and Electronic Engineering Inorganic compound Quantum well |
| Zdroj: | Semiconductor Science and Technology. 7:676-680 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/7/5/010 |
| Popis: | Vertical transport in a GaAs/(Ga,Al)As superlattice has been studied using photoluminescence and magnetophotoluminescence measurements with in-plane fields of up to 25 T at temperatures in the range 4-80 K. Vertical transport at 4 K (which is determined by exciton transport) has been found to be less efficient than free-carrier-like transport at high temperatures (47 and 80 K). Application of a high, in-plane magnetic field tends to reduce the hole transport considerably. In addition, a drastic enhancement of the total photoluminescence yield with in-plane field has been observed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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