Lateral modulations in zero‐net‐strained GaInAsP multilayers grown by gas source molecular‐beam epitaxy

Autor:	Leon Goldstein, André Rocher, Jean-Yves Emery, Christophe Starck, Anne Ponchet
Rok vydání:	1993
Předmět:	Reflection high-energy electron diffraction business.industry Chemistry Inorganic chemistry General Physics and Astronomy Epitaxy Transmission electron microscopy Ultimate tensile strength Optoelectronics Thin film business Anisotropy Quantum well Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 74:3778-3782
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.354469
Popis:	Compressive GaInAsP multiple quantum wells (MQW) grown by gas source molecular‐beam epitaxy present altered structural and optical characteristics when tensile GaInAsP barriers are used instead of lattice‐matched ones. An alternate tensile/compressive GaInAsP MQW has been examined by transmission electron microscopy. A strong lateral modulation of thickness, strain, and probably chemical composition was shown. This modulation exhibits pronounced anisotropy, with a periodicity of about 50 nm along the [110] direction. Although its origin is not fully accounted for yet, it seems to allow partial elastic relaxation of tensile layers. Based on this analysis, a schematic description of distortion modulation is proposed.
Databáze:	OpenAIRE
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