A 1.6V 1.4Gb/s/pin consumer DRAM with self-dynamic voltage-scaling technique in 44nm CMOS technology

Autor:	Hyun-Woo Lee, Ki-Han Kim, Young-Kyoung Choi, Ju-Hwan Shon, Nak-Kyu Park, Kwan-Weon Kim, Chulwoo Kim, Young-Jung Choi, Byong-Tae Chung
Rok vydání:	2011
Zdroj:	2011 IEEE International Solid-State Circuits Conference.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::51b8599581553766a24c6ab362c1712a https://doi.org/10.1109/isscc.2011.5746416 Zobrazit plný text záznamu