An improved theory of spin dependent recombination : application to the Pb center at the Si-SiO2 interface

Autor:	M. Lannoo, D. Stiévenard, Dominique Vuillaume, Dominique Deresmes
Rok vydání:	1993
Předmět:	Physics Condensed matter physics Interface (Java) Center (algebra and category theory) Electrical and Electronic Engineering Condensed Matter Physics Spin (physics) Atomic and Molecular Physics and Optics Recombination Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Microelectronic Engineering. 22:143-146
ISSN:	0167-9317
DOI:	10.1016/0167-9317(93)90147-w
Popis:	We propose an improved theory of the spin dependent recombination at defects in p-n junctions. This theory accounts for the experimental observations on the P b center at the Si-SiO 2 interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::51a18375a0973d3e91a666e1a5b3d7d9 https://doi.org/10.1016/0167-9317(93)90147-w Zobrazit plný text záznamu