| Autor: |
Horst Roeschert, Charlotte Eckes, Georg Pawlowski |
| Rok vydání: |
1993 |
| Předmět: |
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| Zdroj: |
Advances in Resist Technology and Processing X. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.154769 |
| Popis: |
This paper describes some physico-chemical properties and early lithographic results of deep- UV resist systems containing (alpha) -hydroxymethylbenzoin sulfonic acid esters as photoacid generating compounds. (alpha) -Hydroxymethylbenzoin sulfonic acid esters have been prepared in a three-step synthesis in good yields. The favorable thermal and optical properties of selected compounds are discussed in more detail. Uniform optical parameters at 248 nm and nearly identical photoacid generating efficiencies guarantee the formation of different sulfonic acids in comparable concentrations. Therefore (alpha) -hydroxymethylbenzoin sulfonic acid esters can serve as model compounds for systematic studies, i.e., determination of the inhibitor cleavage efficiency or diffusion characteristics of their acids. The influence of acid size and acid strength on the photosensitivity of resist formulations is discussed. The lithographic performance of an acetal-based deep-UV photoresist in terms of resolution, depth of focus, and exposure latitude demonstrates the suitability of (alpha) -hydroxymethylbenzoin sulfonic acid esters as an attractive class of photoacid generating compounds in chemically amplified UV 2-photoresists.© (1993) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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