| Autor: |
Hsing-Jen Wann, Chenming Hu, P.K. Ko |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers. |
| DOI: |
10.1109/vtsa.1993.263644 |
| Popis: |
The peak channel electric field E/sub m/ of MOSFET is a monitor of the hot-carrier-induced device degradation. The quasi-two-dimensional model for bulk MOSFET predicts E/sub m/ to be a function of device parameters including the drain junction depth X/sub j/. In SOI MOSFET there is no clear definition of X/sub j/. To use the silicon film thickness t/sub Si/ for X/sub j/ in E/sub m/ calculation for SOI MOSFET overestimates the hot-carrier currents. The authors present a model that includes the effect of the lateral doping gradient of the drain junction explicitly. The results agree with two dimensional device simulations. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
