Line width dependence of copper resistivity

Autor:	Ming-Hsing Tsai, Qing-Tang Jiang, R.H. Havemann
Rok vydání:	2001
Předmět:	Electron mean free path Materials science Condensed matter physics business.industry chemistry.chemical_element Line width Copper Laser linewidth Optics chemistry Electrical resistivity and conductivity Grain boundary business Electron scattering Line (formation)
Zdroj:	Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
DOI:	10.1109/iitc.2001.930068
Popis:	Studies were carried out to characterize the copper line resistivity as a function of linewidth for sub-130 nm feature size. The Cu line resistivity was found to increase rapidly as the feature size becomes smaller than 0.2 /spl mu/m. Electron scattering from both sidewalls and grain boundaries played significant roles even at geometries several times of the electron mean free path in Cu.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::51891266550bb6276a533f15269d1f81 https://doi.org/10.1109/iitc.2001.930068 Zobrazit plný text záznamu