Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's
| Autor: | R. A. Hamm, R. W. Ryan, Eng Fong Chor, Roger J. Malik |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Annealing (metallurgy) Heterojunction bipolar transistor Metallurgy Failure mechanism Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound chemistry Thermal stability Electrical and Electronic Engineering Ohmic contact Common emitter Leakage (electronics) |
| Zdroj: | IEEE Electron Device Letters. 17:62-64 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.484124 |
| Popis: | The metallurgical stability of ohmic contacts: Pt, Pt/Ti, Au/Ti, Au/Pt/Ti, and Au/Pt/Ti/W, on a 500 /spl Aring/ thick p/sup +/-InGaAs base of InP/InGaAs/InP HBTs have been investigated as a function of anneal temperature. All contacts were stable after a 300/spl deg/C-30 s anneal. Pt contact failed at 350/spl deg/C whereas Pt/Ti, Au/Ti, and Au/Pt/Ti contacts failed at 400/spl deg/C. The failure mechanism was a collector leakage short owing to the penetration of Pt or Ti through the thin base. Only HBTs with Au/Pt/Ti/W contact were still functional after a 400/spl deg/C anneal with no apparent shift in the turn-on voltage for the emitter and collector junctions. |
| Databáze: | OpenAIRE |
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