A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers
| Autor: | F. I. Zubov, M. E. Muretova, Mikhail V. Maximov, V. V. Korenev, Levon V. Asryan, A. V. Savelyev, A. E. Zhukov, Elizaveta Semenova |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Waveguide (electromagnetism) Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Laser 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Electron flux law 0103 physical sciences Optoelectronics 0210 nano-technology Ternary operation business Carrier capture Diode |
| Zdroj: | Semiconductors. 52:1905-1908 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782618140336 |
| Popis: | A search for materials suitable for implementation of 1.55 µm Al-free diode lasers based on InP with asymmetric barrier (AB) layers is conducted. It is shown that a very high (over 106) suppression ratio of the parasitic electron flux can be achieved using common III–V alloys for the ABs. Hence placing such ABs in the immediate vicinity of the active region should completely suppress the parasitic recombination in the waveguide. Several optimal AB designs are proposed that are based on one of the following alloys: Al-free GaInPSb, ternary AlInAs, or quaternary AlGaInAs with a low Al-content. As an important and beneficial byproduct of utilization of such ABs, an improvement of majority carrier capture into the active region occurs. |
| Databáze: | OpenAIRE |
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