Silicon Carbide Vertical JFET Operating at High Temperature
| Autor: | A.J. Hydes, K.P. Hilton, A.B. Horsfall, Christopher Mark Johnson, A.G. Munday, Nicolas G. Wright, Michael J. Uren, Konstantin Vassilevski, Irina P. Nikitina |
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| Rok vydání: | 2008 |
| Předmět: |
Electron mobility
Materials science business.industry Mechanical Engineering chemistry.chemical_element JFET Nanotechnology Condensed Matter Physics Epitaxy chemistry.chemical_compound chemistry Mechanics of Materials Aluminium Silicon carbide Optoelectronics General Materials Science Wafer business Current density Voltage |
| Zdroj: | Materials Science Forum. :1063-1066 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.600-603.1063 |
| Popis: | Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p+-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RO-S ) of 8 mW×cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 °C and without any protective atmosphere. The change of RO-S with temperature rising from 20 to 500 °C followed a power law (~ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC. |
| Databáze: | OpenAIRE |
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