Synthesis of N-Heterocyclic Stannylene (Sn(II)) and Germylene (Ge(II)) and a Sn(II) Amidinate and Their Application as Precursors for Atomic Layer Deposition

Autor:	Robert D. Pike, Prasert Sinsermsuksakul, Adam S. Hock, Sang Bok Kim, Roy G. Gordon
Rok vydání:	2014
Předmět:	Materials science General Chemical Engineering Inorganic chemistry chemistry.chemical_element Germanium Nanotechnology General Chemistry Chemical vapor deposition Atomic layer deposition chemistry Oxidizing agent Materials Chemistry Crystallite Thin film Tin
Zdroj:	Chemistry of Materials. 26:3065-3073
ISSN:	1520-5002 0897-4756
DOI:	10.1021/cm403901y
Popis:	Thin films containing germanium or tin have a great variety of current and potential applications, particularly their oxides or chalcogenides. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are popular ways to make these thin films conformally even on challenging nanostructured substrates. The success of these processes depends on having precursors that are sufficiently stable, volatile, and reactive. In this paper we optimize the syntheses of the following three precursors: 1 and 2 are racemic Ge(II) or Sn(II) cyclic amides made from N2,N3-di-tert-butylbutane-2,3-diamine, and 3 is bis(N,N′-diisopropylacetamidinato)tin(II). All three compounds are demonstrated to be effective precursors for ALD of their monosulfides, GeS or SnS, by reaction with H2S. 2 has also been reported previously to make polycrystalline SnO2 by ALD with oxidizing agents such as H2O2. The cyclic amides 1 and 2 are more volatile than the amidinate 3, vaporizing sufficiently for ALD even at precursor temperatures bel...
Databáze:	OpenAIRE
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