| Autor: |
Masahito Migita, Masayuki Momose, A. Taike, Jun Gotoh |
| Rok vydání: |
1994 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. 138:391-396 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/0022-0248(94)90839-7 |
| Popis: |
The p-type doping of ZnSSe grown by MOMBE (metalorganic molecular beam epitaxy) and MBE (molecular beam epitaxy) has been comparatively studied. The p-type doping by using ammonia as a dopant source in MOMBE resulted in p-ZnSe with hole concentration of up to 10 17 cm -3 . Perfect ohmic contact characteristics were achieved by MOMBE for Au/p-ZnSe:N with hole concentration of 5.5 × 10 17 cm -3 . On the other hand, p-type doping in MBE by using nitrogen plasma as a dopant resulted in p-ZnSe with net acceptor concentration of up to 7.6 × 10 17 cm -3 . I–V characteristics with the lowest Schottky barriers were obtained for Au/p-ZnSe with net acceptor concentration of 6.6 × 10 16 to 7.6 × 10 17 cm -3 for ZnSe:N and of 2.8 × 10 16 to 1.2 × 10 17 cm -3 for ZnS x Se 1− x :N ( x = 0.03−0.12). The characteristics of ZnSe light emitting diodes with p-ZnSe grown by using ammonia in MOMBE are described. The characteristics of a ZnCdSe/ZnSSe laser diode with p-ZnSSe grown by using nitrogen plasma in MBE are discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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