Characterization of Homogeneous and Selective Emitter Profiles Formed by Screen-Printing Phosphorus Diffusion
| Autor: | Hamdi, A., Uzum, A., Al-Matwakel, M., Quislah, M., Al-Ndhari, H., Dhamrin, M., Kamisako, K. |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20142014-2bv.8.8 |
| Popis: | 29th European Photovoltaic Solar Energy Conference and Exhibition; 1123-1126 High concentration emitter profiles were achieved after screen-printing phosphorus diffusion on 2.5–3 cm CZ-Si p-type wafers with a surface area of 25 cm2 and they were characterized using secondary ion mass spectrometry (SIMS) profiling technique. In order to understand the diffusion mechanisms of screen-printed phosphorus diffusion we employ Boltzmann-Matano Analysis to express the effective diffusivity as function of the dopant concentration. The diffusivity profiles so obtained were then used to fit the homogenous and selective emitter profiles that were formed, in the presence of N2 +5% O2 ambient gases, at a peak temperature of 875 °C and diffused for period of 30 mins. The results of the selective emitter profiles show that the highly doped region (n++) profile has a flat plateaukink shape caused by the fast P-diffusion. On the other hand a rapidly-fall profile was formed at the low doped region (n+) due to the slow P-diffusion. The presented results compared very well with those of Bentzen. |
| Databáze: | OpenAIRE |
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