Investigation of Rear-Emitter GaAs0.75P0.25 Top Cells for Application to III–V/Si Tandem Photovoltaics
| Autor: | Steven A. Ringel, Daniel J. Chmielewski, Amber C. Silvaggio, Tyler J. Grassman, Daniel L. Lepkowski, Jacob T. Boyer |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Tandem Silicon business.industry Band gap Photovoltaic system chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound chemistry Saturation current Photovoltaics 0103 physical sciences Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Common emitter |
| Zdroj: | IEEE Journal of Photovoltaics. 9:1644-1651 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2019.2939069 |
| Popis: | A rear-emitter (rear-junction) n -on- p + device design was investigated for use in metamorphic monolithic III–V/Si tandem solar cells as an alternative to the traditional front-emitter (front-junction) n +-on- p design for potentially greater resistance to threading dislocation-induced performance degradation. A comparison of MOCVD-grown rear- versus front-emitter 1.7-eV bandgap GaAs0.75P0.25 top cell isotypes demonstrated as 30-mV advantage in W OC for the rear-emitter design. This reduction in W OC was determined to be nearly equally caused by a reduction in junction recombination current as well as reduced reverse saturation current from improved quasi-neutral region transport. These results suggest that the rear-emitter design may indeed be a promising pathway for application to metamorphic cells, including III–V/Si tandems, where achieving maximum voltage output is often hindered by elevated dislocation densities. However, further optimization of short-circuit current collection is needed to overcome suboptimal collection probability profiles that could limit the efficacy of such structures. |
| Databáze: | OpenAIRE |
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