Temporally resolved selective regrowth of InP around [110] and [-110] mesas

Autor: Gunnar Landgren, Olle Kjebon, E. Rodriguez Messmer, Sebastian Lourdudoss
Rok vydání: 1996
Předmět:
Zdroj: Journal of Electronic Materials. 25:389-394
ISSN: 1543-186X
0361-5235
DOI: 10.1007/bf02666608
Popis: Temporally resolved selective regrowth of InP around reactive ion etched [110] and [-110] directional mesas is studied by hydride vapor phase epitaxy at the growth temperatures of 600, 650, 685, and 700°C. The regrowth profiles are strikingly different depending upon the mesa orientation. The results are interpreted by invoking the difference in the bonding configurations of these mesas as well as the growth facility in a direction leading to the largest reduction of dangling bonds under the growth conditions. Various emerging planes during regrowth are identified and arehhl planes with initial values of 1/h ≤ 3 but ≥ 3 as the planarization is approached. Initial lateral growth defined as the growth away from the mesa at half of its height in the very first minute is a decreasing function of temperature when plotted as Arrhenius curves. Such a behavior is attributed to the exothermicity of the reaction and to an enhanced pyrolysis of PH3 to P2. The lateral growth rate is much larger than that on the planar substrate. This should be taken into account when regrowth of a doped layer (e.g. InP:Fe or InP:Zn) is carried out to fabricate a buried heterostructure device since the dopant concentration can be very much lower than the one optimized on the planar substrates.
Databáze: OpenAIRE
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