Performance Evaluation of 1.5 kV Solar Inverter With 2.5 kV Silicon Carbide mosfet
| Autor: | William George Earls, Peter Almern Losee, Rajib Datta, Huan Hu, Xu She |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering 05 social sciences Electrical engineering 02 engineering and technology Converters Solar inverter Industrial and Manufacturing Engineering chemistry.chemical_compound chemistry Control and Systems Engineering Derating Logic gate MOSFET 0202 electrical engineering electronic engineering information engineering Silicon carbide Inverter 0501 psychology and cognitive sciences Electrical and Electronic Engineering business 050107 human factors Voltage |
| Zdroj: | IEEE Transactions on Industry Applications. 55:7726-7735 |
| ISSN: | 1939-9367 0093-9994 |
| DOI: | 10.1109/tia.2019.2912796 |
| Popis: | 1.5 kV dc link voltage has been a trend for the solar industry. Moving from 1 to 1.5 kV dc voltage can increase string length, enhance inverter conversion ability, increase array block sizes, and improve performance. Multilevel converters are the natural choices while control becomes more complicated. If a simple two-level converter is adopted, the 1.7 kV device may not be applicable considering the voltage derating for certain failure rate. Therefore, devices with higher blocking voltage should be considered. This paper reports for the first time the performance characterization of a 2.5 kV silicon carbide (SiC) mosfet . The potential application of this device for 1.5 kV solar inverter is also evaluated compared to the solutions with a 1.2 kV device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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